SanDisk Corporation announced two new kinds of memory technology: a 16Gb x3 NAND flash which uses 56nm flash technology, and a 43nm technology. The first will go on production in March or April, and it will be the world’s first 3-bits-per-cell (x3) NAND flash memory. This one provides over 20% more die per wafer than a 2-bits-per-cell, and it has a higher manufacturing efficiency. The second one provides twice the density per chip than the 56nm 16Gb process technology. The 43nm Multi-Level Cell NAND flash memory maintains the performance but it lowers the die-cost. SanDisk intends to start shipping products using this technology by the second quarter of 2008 which will start with 16Gb and in the second half of 2008 will continue with 32Gb. SanDisk colaborated with Toshiba Corporation for this two new memory technologies.

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